Publications on InGaAs Structures
(with collaborators at Intel and other universities)
(with collaborators at Intel and other universities)
- “Effect of two-dimensional parity symmetry breaking in Aharonov-Bohm interference phenomena,” Y.T. Xie, J.J. Heremans, and M.B. Santos, Integrated Ferroelectrics 174, 8 (2016).
- “Magnetoelectric Mapping as Observed in Quantum Coherence Phenomena under Strong Spin-Orbit Interaction,” J.J. Heremans, R.L. Kallaher, M. Rudolph, and M.B. Santos, Integrated Ferroelectrics 166, 10 (2015).
- “Determination of time-reversal symmetry breaking lengths in an InGaAs interferometer array,” S.L Ren, J.J. Heremans, S. Vijeyaragunathan, T.D. Mishima, and M.B. Santos, Journal of Physics- Condensed Matter 27, 185801 (2015).
- “Aharonov–Bohm oscillations, quantum decoherence and amplitude modulation in mesoscopic InGaAs/InAlAs rings,” S.L. Ren, J .J. Heremans, C.K. Gaspe, S. Vijeyaragunathan, T.D. Mishima, and M.B. Santos, Journal of Physics: Condensed Matter 25, 435301 (2013).
- “Effects of Anneal and Silicon Interface Passivation Layer Thickness on Device Characteristics of In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors,” Feng Zhu, Han Zhao, I. Ok, H. S. Kim, J. Yum, Jack C. Lee, Niti Goel, W. Tsai, C. K. Gaspe, and M. B. Santos, Electrochemical and Solid-State Letters 12, H131 (2009).
- “A high performance In0.53Ga0.47As metal-oxide-semiconductor field effect transistor with silicon interface passivation layer,” Feng Zhu, Han Zhao, I. Ok, H. S. Kim, J. Yum, Jack C. Lee, Niti Goel, W. Tsai, C. K. Gaspe, and M. B. Santos, Applied Physics Letters 94, 013511 (2009).
- “A study of metal-oxide-semiconductor capacitors on GaAs, In0.53Ga0.47As, InAs, and InSb substrates using a germanium interfacial passivation layer,” Hyoung-Sub Kim, I. Ok, M. Zhang, F. Zhu, S. Park, J. Yum, H. Zhao, Jack C. Lee, Prashant Majhi, N. Goel, W. Tsai, C. K. Gaspe, and M. B. Santos, Applied Physics Letters 93, 062111 (2008).
- “In0.53Ga0.47As based MOS capacitors with ALD ZrO2 gate oxide demonstrating low gate leakage current and equivalent oxide thickness less than 1 nm,” Niti Goel, Prashant Majhi, H. Wen, Michael Santos, Serge Oktyabrsky, Vadim Tokranov, Rama Kambhampati, Richard Moore, Feng Zhu, Jack Lee, Wilman Tsai, Applied Physics Letters 92, 222904 (2008).
- “Self-aligned n-channel metal-oxide-semiconductor field effect transistor on high-indium-content In0.53Ga0.47As and InP using physical vapor deposition HfO2 and silicon interface passivation layer,“ InJo Ok, H. Kim, M. Zhang, F. Zhu, S. Park, J. Yum, H. Zhao, Domingo Garcia, Prashant Majhi, N. Goel and W. Tsai, C. Gaspe, M.B. Santos, and Jack C. Lee, Applied Physics Letters 92, 202903 (2008).
- “Band offsets between amorphous LaAlO3 film on In0.53Ga0.47As,” N. Goel, W. Tsai, C. M. Garner, Y. Sun, P. Pianetta, M. Warusawithana, D.G. Schlom, H. Wen, C. Gaspe, J.C. Keay, M.B. Santos, L.V. Goncharova, E. Garfunkel, T. Gustafsson, Applied Physics Letters 91, 113515 (2007).
- “High-indium-content InGaAs metal-oxide-semiconductor capacitor with amorphous LaAlO3 gate dielectric,” N. Goel, P. Majhi , W. Tsai , M. Warusawithana , D.G. Schlom, M.B. Santos, J. Harris, Y. Nishi, Applied Physics Letters 91, 093509 (2007).